BGS12A spdt rf switch preliminary data sheet, v1.1, sep. 2007 small signal discretes
edition 2007-09-14 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BGS12A spdt rf switch preliminary data sheet 3 v1.1, 2007-09-14 BGS12A revision history: 2007-09-14, v1.1 previous version: 2006-10-19, v1.0 page subjects (major changes since last revision) all document layout change
preliminary data sheet 4 v1.1, 2007-09-14 BGS12A spdt rf switch BGS12A BGS12A description the BGS12A general purpose rf mos switch is designed to cover a broad range of applications from 0.1 to 3 ghz. the symmetric design of its single pole double throw configuration, as shown in figure 1 offers high design flexibility. this single supply chip integrates on-chip cmos logic driven by a simple, single-pin cmos or ttl compatible control input signal. the 0.1 db compression point exceeds the switch?s maximum input power level of 21 dbm, resulting in linear performance at all signal levels. the rf switch has a very low insertion loss of 0.3 db in the 1 ghz and 0.6 db in the 2 ghz range. unlike gaas technology, external dc blocking capacitors at the rf ports are only required if dc voltage is applied externally. the BGS12A rf switch is manufactured in infineon?s patented mos technology, offering the performance of gaas with the economy and integration of conventional cmos including the inherent higher esd robustness. figure 1 functional diagram features ? low insertion loss ? high port-to-port-isolation ? low harmonic generation ? on-chip control logic ? lead free solder bumps ? high esd robustness ? no external components required ? general purpose switch for applications up to 3 ghz ? pb-free (rohs compliant) package type package marking chip BGS12A fwlp-6-1 12 n0735 % * 6 $ b ) x q f w l r q d o b ' l d j u d p p y v g * 1 ' 5 ) 9 g g & |